Loading...
News Article

New efficiency record for perovskite LEDs

News
Best external quantum efficiencies higher than 20 percent

Researchers at the University of Cambridge have developed perovskite-based LEDs that can be made at much lower costs than OLEDs, and can be tuned to emit light across the visible and near-infrared spectra with high colour purity.

"The best external quantum efficiencies of these devices are higher than 20 percent at current densities relevant to display applications, setting a new record for perovskite LEDs, which is a similar efficiency value to the best OLEDs on the market today," said Baodan Zhao, the paper's first author.

The researchers have engineered the perovskite layer in the LEDs to show close to 100 percent internal luminescence efficiency, opening up future applications in display, lighting and communications, as well as next-generation solar cells. These perovskite materials are of the same type as those found to make highly efficient solar cells that could one day replace commercial silicon solar cells. While perovskite-based LEDs have already been developed, they have not been nearly as efficient as conventional OLEDs at converting electricity into light.

Earlier hybrid perovskite LEDs, first developed by Richard Friend's group at the University's Cavendish Laboratory four years ago, were promising, but losses from the perovskite layer, caused by tiny defects in the crystal structure, limited their light-emission efficiency.

Now, Cambridge researchers from the same group and their collaborators have shown that by forming a composite layer of the perovskites together with a polymer, it is possible to achieve much higher light-emission efficiencies, close to the theoretical efficiency limit of thin-film OLEDs. Their results are reported in the journal Nature Photonics.

"This perovskite-polymer structure effectively eliminates non-emissive losses, the first time this has been achieved in a perovskite-based device," said Dawei Di from Cambridge's Cavendish Laboratory, one of the corresponding authors of the paper. "By blending the two, we can basically prevent the electrons and positive charges from recombining via the defects in the perovskite structure."

The perovskite-polymer blend used in the LED devices, known as a bulk heterostructure, is made of two-dimensional and three-dimensional perovskite components and an insulating polymer. When an ultra-fast laser is shone on the structures, pairs of electric charges that carry energy move from the 2D regions to the 3D regions in a trillionth of a second: much faster than earlier layered perovskite structures used in LEDs. Separated charges in the 3D regions then recombine and emit light extremely efficiently.

"Since the energy migration from 2D regions to 3D regions happens so quickly, and the charges in the 3D regions are isolated from the defects by the polymer, these mechanisms prevent the defects from getting involved, thereby preventing energy loss," said Di.

Perovskite-based LEDs still need better stability if they are to be adopted in consumer electronics. When perovskite-based LEDs were first developed, they had a lifetime of just a few seconds. The LEDs developed in the current research have a half-life close to 50 hours, which is a huge improvement in just four years, but still nowhere near the lifetimes required for commercial applications, which will require an extensive industrial development programme. "Understanding the degradation mechanisms of the LEDs is a key to future improvements," said Di.

The research was funded by the Engineering and Physical Sciences Research Council (EPSRC) and the European Research Council (ERC).

"˜High-efficiency perovskite-polymer bulk heterostructure light-emitting diodes' by Baodan Zhao et al; Nature Photonics (2018).

Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: