Loading...
News Article

Marktech Optoelectronics Introduces InGaAs/InP Broadband PIN Photodiodes

News
Marktech Optoelectronics, a privately-held designer and manufacturer of standard and custom optoelectronics components and assemblies announces the global market introduction of the Model MTPD1346D-xx series, a family of InGaAs/InP broadband PIN photodiodes.

Marktech InGaAs/InP PIN photodiodes are designed to effectively convert broadband light into photocurrents within the VIS-SWIR range. In addition to their low noise, high sensitivity and high-speed response, they feature wide standard spectral ranges of 0.6 μm to 1.7 μm (1.7 μm material), low dark current, and high efficiency, typically 0.6A/W. Standard Model MTPD1346D-xx series broadband PIN photodiodes are offered in active area sizes from 0.1 mm to 3.0 mm. Each is packaged within a hermetically sealed, 3-pin TO-46 metal can with flat lens cap, and with a choice of either thru-hole or surface mounting.

Marktech MTPD1346D-xx series InGaAs/InP broadband PIN photodiodes are designed to effectively support a diverse array of applications, particularly where high-speed performance, high data rates, low dark current, small capacitance, and smaller active area sizes are required. Typical applications include aerospace, automation, autonomous vehicles, high-speed communications, industrial controls, LIDAR, medical, material and chemical analysis, security, and wearables, among others.

In addition, the photodiodes may be seamlessly integrated, together with Marktech SWIR emitters, as a single, compact package. The manufacturer advises that custom and hybrid designs may be produced in as few as 6-8 weeks from customer prototype approvals.

Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: