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Heterostructure Photodiode on an InAs Substrate

LASER COMPONENTS, a leading manufacturer of photovoltaic indium arsenide detectors releases IA35 heterostructure photodiode designed for allowing absorption of incident IR photons and generating electron hole pairs collected at external diodes offering a strong choice for many applications due to their high sensitivity, fast response, low noise and wide dynamic range.

The IA35 is a heterostructure photodiode on an InAs substrate with a relatively wide peak at 2.8 microns. It has a 0.5mm diameter chip and is designed specifically for uncooled operation as well as having a spectral range of up to 3.5microns, 20% cut off. The curve of the spectral response can be seen in the image shown. Compared to standard InAs products the IA35 offers double the shunt resistance with a quadrupled area.

The devices are manufactured in standard TO style packages and have long expected lifetimes making them ideal for fit and forget applications such as gas analysis, non-contact temperature measurement, laser monitoring and spectrophotometry.

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