Loading...
News Article

Mitsubishi to shrink Projectors with new laser diode

News

638nm red laser diode has world-record output power of 3W

Mitsubishi Electric has announced the ML562G86 pulse laser diode for projectors, featuring a vibrant 638nm red light, world-record output power of 3.0W under pulse operation and mean time to failure (MTTF) of over 20,000 hours.

The ML562G86’s high output power and wide operating temperature range will contribute to enhanced projector luminance and miniaturisation. Sample sales will begin on January 11, 2019 and volume shipping will begin in April 2019.

Projector light sources are shifting from mercury lamps to solid-state light sources that offer wall-plug efficiency, a wide colour gamut, and highly reliable operation. LDs achieve the best wall-plug efficiency among solid-state light sources, thereby contributing to lower power consumption, and thus are viewed as the most promising new light source for projectors. Mitsubishi Electric expects to use laser diodes to develop not only superior projectors but also advanced laser TVs capable of more vibrant images than liquid-crystal TVs.

In September 2015, Mitsubishi Electric released its ML562G84 high-power red laser diode, which achieved 2.5W output under pulse operation as a red laser diode in three RGB light sources for projectors. With conventional laser diodes, extended operation at 3.0W output power causes the laser’s light-emitting surface crystals to melt, making it difficult to achieve an MTTF of 20,000 hours. In response, Mitsubishi Electric has developed the technology required to suppress degradation of the light-emitting surface even at 3.0W, leading to the newly announced ML562G86 red laser diode that achieves unprecedented 3.0W output power.

Double heterostructure HEMTs for handsets
AlixLabs to collaborate with Linköping University
SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: