Loading...
News Article

Jasper and Plessey demo wafer-level bonded HD microLED displays

News

Bonding between GaN-on-Silicon LED wafers and a high-density CMOS backplane results in microLED displays with addressable LEDs

Plessey, a British developer of microLED technology, has announced a significant milestone in the development of its monolithic microLED displays alongside its backplane partner, Jasper Display Corp (JDC), a fabless semiconductor company based in Taiwan with R&D in Santa Clara, California.

Following a continued partnership with JDC including an extensive capital investment in a complete tool set, enabling successful wafer to wafer bonding. Plessey has succeeded in wafer level bonding of its GaN-on-Silicon monolithic microLED wafers with JDC’s eSP70 silicon patented backplane technology, resulting in microLED displays that contain addressable LEDs.

Wafer level bonding poses significant technical challenges and has not previously been achieved between GaN-on-Silicon LED wafers and high-density CMOS backplanes.

Plessey initially achieved the world’s first mechanically successful wafer to wafer bond in early April 2019. This significant success has now been followed by a fully functional, electrical and mechanical bond, resulting in a fully operational microLED display.

Plessey’s microLED display features an array of 1920×1080 (FHD) current-driven monochrome pixels on a pitch of 8 microns. Each display requires more than two million individual electrical bonds to connect the microLED pixels to the controlling backplane. The JDC backplane provides independent 10-bit single colour control of each pixel – Bonding a complete LED wafer to a CMOS backplane wafer, incorporates over 100 million micro level bonds between the wafers.

Wei Sin Tan, director of epitaxy and advanced product development at Plessey, said: “This is a momentous milestone in the development of our monolithic microLED display technology. To the best of our knowledge this is truly a WORLD FIRST and we are extremely proud of this tremendous achievement. This is what the industry has been waiting for and opens up a new market for microLED emissive display applications.”

JDC’s VP marketing and orroduct management, T.I. Lin, said: “Plessey’s monolithic microLED array is a great match to JDC’s high-density silicon backplane. Our JD27E series demonstrates our ability to deliver what our valuable partner Plessey and the wider industry has been waiting for – silicon backplanes that have been designed with their microLED display requirements in mind.”

At SID Display Week 2019, Plessey will unveil its microLED technology and demonstrate why its scalable and repeatable GaN-on-Silicon monolithic process is the only solution for next-generation augmented and mixed reality (AR/MR) display products, head-up/head-mounted (HUD/HMDs), smartphones and other microLED based display applications.

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: