StratEdge paper on how to Optimise High Power GaN Devices
White paper details how to reduce chip-to-package junction temperature to improve GaN chip efficiency and reliability
StratEdge, a company focused on high-frequency and high-power semiconductor packages for microwave, millimetre-wave, and high-speed digital devices, has announced a white paper, 'Eutectic Die Attach Optimises High Power GaN Devices' on the company's website.
The article explains how the package in which the GaN device is attached, and the method used to attach the device to the package, can optimise the device’s efficiency, performance, and reliability.
"The success of the package’s performance is dependent on the base material used, the quality of the package construction, and the attachment process. By creating a package environment that reduces chip-to-package junction temperatures, GaN chip efficiency and reliability can be improved," explained Casey Krawiec, vice president of global sales at StratEdge. "StratEdge research shows that thermal dissipation can be further maximized by optimizing the die-attach assembly process."
The paper by Casey Krawiec, details how StratEdge’s post-fired ceramic package with a copper-molybdenum-copper (CMC) base, and its proprietary eutectic die attach method, results in a near void-free attachment that reportedly reduces junction temperatures by 20 degC as compared to standard assembly methods using ceramic packages of alternate construction.
