Macom Launches GaN-on-SiC Power Amp Range
First two general purpose PAs are for avionics, high power mobile radios, wireless systems and test instrumentation
At the virtual International Microwave Symposium (IMS), Macom has announced a new GaN-on-SiC power amplifier product line, which it is branding Macom Pure Carbide. The company also announced the introduction of the first two new products in the product line, the MAPC-A1000 and the MAPC-A1100.
“This new product line significantly enhances the capability of our existing RF power product portfolio,” said Stephen G. Daly, president and CEO. “GaN on SiC is a compelling technology and we are excited to begin offering our customers both standard and custom Macom Pure Carbide power amplifier solutions.”
The MAPC-A1000 is a high power GaN-on-SiC amplifier designed to operate between 30 MHz and 2.7 GHz and is housed in a surface mount plastic package. The easy-to-use general purpose amplifier integrates an input match which simplifies the customer's design-in effort. The amplifier can deliver more than 25 W (44dBm) at greater than 50 percent efficiency from 500 MHz to 2.7 GHz when tested in a circuit designed for operation over 2.2 GHz simultaneous bandwidth.
The MAPC-A1100 is a high power GaN-on-SiC amplifier designed to operate up to 3.5 GHz. The device is capable of supporting both CW and pulsed operations with output power levels of at least 65 W (48.1dBm) in an air cavity ceramic package.
The two new general purpose amplifier products are ideal for use in avionics, high power mobile radios, wireless systems and test instrumentation.