MRF to Provide Multiple SiC Crystal Growth Furnaces
Systems will be used for processing 150 mm SiC boules with capabilities for 200 mm development
MRF, a New Hampshire-based specialist in high temperature thermal processing of advanced materials, has been selected by a US based company to produce multiple precision furnace systems for the growth of SiC single crystals.
The systems implement resistive heating, engineered to produce the desired vertical and radial thermal gradients, for processing 150 mm boules with capabilities for 200 mm development. Adaptive and accurate partial pressure control is integrated with the system and the HMI control interface.
The furnaces are front loading vacuum and controlled atmosphere systems with a rotating growth crucible. Front loading enables direct access to the cylindrical heat zone. Precision operation is up to 2500degC in controlled partial pressure of process gases,
