Loading...
News Article

Experimental LEDs emit warm and cool white light

News

KAUST team uses InGaN to build phosphor-free monolithic white-light LEDs

A KAUST team has recently developed a way of producing a white-light LED that overcomes some critical challenges.

There are two main ways to make white-light LEDs. One is to combine devices of different materials, where each material emits a different colour. But this increases the complexity and cost of manufacture of LEDs. The other approach is to use a single semiconductor and mix in a phosphor that absorbs some of the light emitted and then re-emits it as a different colour. However, phosphor degrades over time, limiting the useful lifetime of these devices.

Daisuke Iida and Kazuhiro Ohkawa's team at KAUST have devised a way to build phosphor-free monolithic white-light LEDs using the semiconductor InGaN.

The emission colour of InGaN depends on the relative content of the indium and gallium atoms. For example, GaN emits ultraviolet light, but adding indium shifts the emission across the visible spectrum and into the infrared. The emission can be controlled further by sandwiching very thin layers of InGaN with one composition between two layers of different composition, creating so-called quantum wells.

"What is unique about our devices is that we use material defects, or V-pit structures, to enhance the injection of a current into the semiconductor," says Iida. The LEDs designed by the KAUST team included both blue-light emitting quantum wells with a 20 percent indium content and 34 percent indium red quantum wells. Combined, this monolithic LED emits light across the entire visible spectrum. By controlling the current passing through the device, the team could change the emission from a warm white to a natural white and through to a cool white.

"The next step is to improve the emission efficacy of the red emission component," says Iida. "The red emission is a key factor of the high colour-rendering LEDs with the natural white emission."

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfOâ‚‚ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: