Loading...
News Article

Transphorm Wins $1.4M Contract from DARPA

News

Project focuses on developing alternative N-polar GaN on sapphire substrates for RF/mm-wave applications

US GaN company Transphorm has been awarded a $0.9 million contract with a $0.5 million option by the Defense Advanced Research Projects Agency (DARPA).

This contract, W31P4Q-21-C-0009, commissions Transphorm to explore performance and cost boundaries for manufacturing an alternative Nitrogen polar (N-polar) GaN solution for DoD and Commercial RF/mm-wave applications. Transphorm will be responsible for delivering the epiwafer technology whereas the sub-contractor, University of California, Santa Barbara (UCSB), will fabricate the RF/mm-wave transistors.

The new project builds on Transphorm’s history as well as ongoing work with the Office of Naval Research (ONR) to establish a domestic resource and supply for RF GaN epiwafers, with emphasis on N-polar GaN, a technology that is proven to deliver greater benefits than today’s more commonly used Gallium polar (Ga-polar) GaN for RF and mm-wave applications.

Transphorm will explore the use of sapphire substrates to achieve greater cost efficiency for N-polar GaN solutions compared to conventional Ga-polar on SiC solutions. The work output is expected to yield a stable, high quality thin-epi structure with its capability established by the high-performance transistors.

“We’re thankful to DARPA for the opportunity and confidence to further define the N-polar GaN solution for RF applications. This project, coupled with our ongoing work to scale manufacturing with ONR support is an incredible opportunity for Transphorm to grow its position as a premium RF epiwafer supplier, our second business vertical. The goal now is to take that foundation and enable our RF epi customers to achieve more efficient RF power for the dollar,” said Mishra, CTO and co-founder of Transphorm.

“Sapphire is an attractive material choice for this purpose but has historically been dismissed as it has low heat conductance. We believe that, with innovative engineering, the program team can overcome that limitation and are excited for the chance to set that benchmark for the GaN RF industry.”

The potential value of N-polar GaN in RF/mm-wave applications as well as possibly for future power electronics is appealing given its extraordinary efficiencies at frequencies as high as 94 GHz. It is primed to directly benefit DoD systems along with applications for 5G, 6G, and beyond.

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: