EPC announces 40V eGaN FET
Device is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications
Efficient Power Conversion Corporation (EPC) has expanded the selection of low voltage, off-the-shelf GaN transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET.
The EPC2067 is suitable for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse recovery losses enable high frequency operation of 1 MHz, and beyond, at high efficiency in a tiny 9.3 mm2 footprint for state-of-the-art power density.
According to Alex Lidow, EPC’s co-founder and CEO, “The EPC2067 makes the ideal switch for the secondary side of the LLC DC-DC converter from 40 V – 60 V to 12 V. This 40-volt device offers improved performance and cost compared with previous-generation 40 V GaN FETs allowing designers to economically improve efficiency and power density.”
Development Board
The EPC90138 development board is a 40 V maximum device voltage, 40 A maximum output current, half bridge with onboard gate drives, featuring the EPC2067 eGaN FETs. This 2 inch x 2 inch (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2067.
