Loading...
News Article

EPC announces 40V eGaN FET

News

Device is smaller, more efficient, and more reliable than MOSFETs for high-performance, space-constrained applications

Efficient Power Conversion Corporation (EPC) has expanded the selection of low voltage, off-the-shelf GaN transistors with the introduction of the EPC2067 (1.3 mΩ typical, 40 V) eGaN FET.

The EPC2067 is suitable for applications with demanding requirements for high power density performance including 48 V – 54 V input servers. Lower gate charges and zero reverse recovery losses enable high frequency operation of 1 MHz, and beyond, at high efficiency in a tiny 9.3 mm2 footprint for state-of-the-art power density.

According to Alex Lidow, EPC’s co-founder and CEO, “The EPC2067 makes the ideal switch for the secondary side of the LLC DC-DC converter from 40 V – 60 V to 12 V. This 40-volt device offers improved performance and cost compared with previous-generation 40 V GaN FETs allowing designers to economically improve efficiency and power density.”

Development Board

The EPC90138 development board is a 40 V maximum device voltage, 40 A maximum output current, half bridge with onboard gate drives, featuring the EPC2067 eGaN FETs. This 2 inch x 2 inch (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2067.

SiC MOSFETs: Understanding the benefits of plasma nitridation
Wolfspeed reports Q2 results
VueReal secures $40.5m to scale MicroSolid printing
Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: