Loading...
News Article

Korean team makes 0V threshold p-channel perovskite TFT

News

Perovskite thin film transistor shows potential for OLED display driving and other applications

A research team from POSTECH (Pohang University of Science and Technology) in collaboration with Samsung Display, has developed a p-channel perovskite thin film transistor (TFT) with a threshold voltage of 0V.

In this study, published in Nature Communications, the research team led by Yong-Young Noh and PhD candidates Huihui Zhu and Ao Liu (pictured centre, left and right) constructed a MASnI3 semiconductor layer by mixing the halide anions (iodine-bromine-chlorine) to increase the stability of the transistor. The device made using this semiconductor layer showed high performance and excellent stability without hysteresis.

In experiments, the TFTs realised a high hole mobility of 20cm2V-1s-1 and 10 million on/off current ratio, and also reached the threshold voltage of 0V. The researchers say that a p-channel perovskite transistor with a threshold voltage of 0V is a world first. By making the material into a solution, the researchers also enabled the transistors to be printed, lowering their manufacturing cost.

Through this study, the research team demonstrated that the primary cause of the hysteresis that lowers the performance of the perovskite TFTs is the minority carrier trapping, not the ion migration. By lowering the threshold voltage, the movement of electrons and holes is undisturbed, enabling the current to flow smoothly.

Furthermore, the research team succeeded in integrating the perovskite TFTs with commercialised n-channel IGZO TFTs on a single chip to construct high-gain complementary inverters through a circuit-printing method.

This study is drawing attention from academic circles as a technology applicable to the development of OLED display driving circuits, p-channel transistors of vertically stacked devices, and neuromorphic computing for AI calculations.

The POSTECH research team and Samsung Display have already applied for domestic and international patents for this technology last year.

'High-performance hysteresis-free perovskite transistors through anion engineering' by Huihui Zhu et al; Nature Communications, April 2022

Mitsubishi joins Horizon Europe's FLAGCHIP project
Vishay launches new high voltage SiC diodes
UK team leads diamond-FET breakthrough
GaN adoption at tipping point, says Infineon
BluGlass files tuneable GaN laser patents
QD company Quantum Science expands into new facility
Innoscience files lawsuit against Infineon
Riber revenues up 5% to €41.2m
Forvia Hella to use CoolSiC for next generation charging
Photon Design to exhibit QD simulation tool
Ortel transfers CW laser fabrication to Canada
Luminus adds red and blue multi-mode Lasers
PseudolithIC raises $6M for heterogeneous chiplet tech
Mesa sidewall design improves HV DUV LEDs
IQE revenue to exceed expectations
'Game-changing' VCSEL system targets clinical imaging
German start-up secures finance for SiC processing tech
Macom signs preliminaries for CHIPS Act funding
IQE and Quintessent partner on QD lasers for AI
EU funds perovskite tandems for fuel-free space propulsion
EU to invest €3m in GeSi quantum project
Transforming the current density of AlN Schottky barrier diodes
Turbocharging the GaN MOSFET with a HfO₂ gate
Wolfspeed launches Gen 4 SiC MOSFET technology
Report predicts high growth for UK's North East
Element Six unveils Cu-diamond composite
SemiQ launches hi-rel 1700V SiC MOSFETs
Lynred to exhibit Eyesential SWIR sensor for machine vision
Thorlabs buys VCSEL firm Praevium Research
Advancing tuneable InP lasers on a heterogeneous platform
P-GaN gate HEMTs have record threshold voltage
Guerrilla RF releases GaN power amplifier dice
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: