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GaN Systems releases ADS models for RF power


Offering high efficiency at around 1/3 the cost of current RF power solutions

GaN Systems has released GaN transistor ADS models to facilitate customer ease-of-use in RF power markets traditionally dominated by expensive silicon LDMOS and other RF power technologies.

By replacing these existing devices power semiconductors at frequencies (typically 13-81 MHz), GaN Systems says its customers will benefit from high power output and efficiency while reducing the size and about 1/3 the cost of their existing solutions.

The company says that the availability of these ADS models is a key ingredient for high frequency design. GaN Systems’ power transistors, such as its GS66502B and GS66508B, have been implemented in several applications. Capable of operating up to 100 MHz and at power levels from 2kW to 250kW, applications include RF heating and drying systems, high-frequency radar systems, CO2 lasers, RF defrosters, communication jammers, and plasma generators.

GaN Systems’ expertise in both power and RF uniquely positions the company to provide solutions for the ISM RF power market. Customers already rely on GaN Systems’ high frequency expertise for solutions in the wireless power segment for applications in the 6 to 27 MHz area. With RF power, as frequencies increase, the tools required increase with the needs for ADS models to ensure high reliability of simulation results prior to final design.

“GaN Systems is making its mark in the RF power world. We have a winning combination of world-class GaN power transistors, high reliability, and application expertise to capture and revolutionise these market segments with lower cost, high-efficiency GaN devices,” said Jim Witham, CEO of GaN Systems.

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