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SweGaN and Chalmers University show latest GaN power devices


Devices have high breakdown voltage of >1600V and low leakage current of 22nA/mm on QuanFINE epitaxial solutions 

Chalmers University of Technology and SweGaN AB, a manufacturer of custom-made GaN-on-SiC epitaxial wafers, announces a publication in Electron Device Letters, demonstrating new state-of-the-art results of high-voltage GaN power devices enabled by Chalmers MIS-HEMT technology and SweGaN QuanFINE buffer-free GaN-on-SiC materials.

Among key findings, the research identifies QuanFINE epiwafers as a highly competitive candidate for high-voltage power devices used for 1200V applications, in addition to its strong traction in the RF market at present.

”With excellent results establishing the robust capability of our material, we anticipate there will be growing opportunities for SweGaN in this era of electric vehicles, where the power devices are critical for the vehicle’s performance. We are currently in discussions with early-adopter GaN power device companies to launch high-voltage power solutions that harvest the true advantages of GaN.” says Jr-Tai Chen, CTO, SweGaN.

The paper is 'High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure' by Björn Hult et al. It describes a novel ‘buffer-free’ GaN-on-SiC MIS-HEMTs for power switching applications. In addition, high voltage operation with exceptionally low gate and drain leakage currents is shown and specific on-resistance of 3.61 m Ω⋅ cm 2 and a breakdown voltage of 1622 V at a drain current of 22 nA/mm are achieved.

“SweGaN has developed highly robust and innovative GaN-on-SiC materials, says Niklas Rorsman, Chalmers University of Technology. We are happy to collaborate with SweGaN on a continuous basis to perform joint research and development. The collaboration has been very successful to developing III-nitride materials and devices“

”the collaboration of Chalmers and SweGaN have been successful on numerous research projects. Harnessing the combined expertise from the material level to the device level is the key behind this achievement, which will also further enhance SweGaN’s long-term market strategy and product innovation - and provide significant benefits to our global customer base,” says Jonas Nilsson, CEO, SweGaN.

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