WeEn Semis to attend PCIM 2024
Company to show a broad portfolio of high-voltage SiC MOSFETs and power diodes, thyristors and IGBTs
Chinese firm WeEn Semiconductors, a spin-off from NXP, will be exhibiting the company’s SiC technologies, automotive grade power devices and high reliability IGBTs at PCIM Europe 2024 in Nuremberg from June 11-13, 2024.
Under the theme of 'Power Efficiency for a Cooler Planet,' WeEn will exhibit its range of high-voltage 1700V SiC power modules, SiC 1200V/750V MOSFETs, thyristors, power diodes, silicon-controlled rectifiers (SCRs), IGBTs, and other power devices tailored for the renewable energy and e-mobility industries.
“At WeEn, we are dedicated to developing cost-effective power control technologies that support high voltage ratings and efficient, high-performance operation,” remarked WeEn Semiconductors CEO, Markus Mosen. “We’re excited to showcase the solutions we've launched in recent months at PCIM, not least those technologies targeted at renewable energy and electric mobility applications that demonstrate our commitment to products that not only meet but exceed the unique demands of every application while contributing to environmental sustainability."
At PCIM, the company will introduce a range of SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) in TSPAK packages for EV charging, On Board Charger (OBC), PV inverters, and high power density PSU applications. The new MOSFETs are available in 650V, 750V, 1200V, and 1700V variants, with resistance ranging from 20mΩ to 150mΩ. The current range for the new SiC SBDs is 10 to 40A in 650V, 750V, and 1200V variants.
A range of SiC power modules in half-bridge, four-pack, six-pack, dual booster, and NPC 3L topologies will also be on display. Target markets for these SiC modules include EV charging, energy storage systems, motor drivers, industrial power supply units, test instruments, and PV inverters.
The company will also show thyristor/diode modules; Super Junction MOSFETs with breakdown voltage ranges of 600V, 650V, and 800V; a wide range of trench MOSFETs with voltage ranges from 20V to 30V; 45V to 2000V power diodes; and range of IGBTs boasts that are said to have low leakage currents and exceptional conduction and switching characteristics at both high and low junction temperatures.
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