WIN Semis announces mmWave GaN-on-SiC tech
Taiwanese compound semiconductor foundry WIN Semiconductors has expanded its portfolio of RF GaN technologies with the beta release of a robust mmWave GaN on SiC technology.
Core to this platform (called NP12-0B) is a 0.12μm gate RF GaN HEMT technology incorporating multiple refinements to enhance DC and RF ruggedness and add die-level moisture resistance. NP12-0B integrates multiple transistor improvements providing high ruggedness when operated in deep-saturation/high-compression pulsed and CW conditions.
According to WIN, the new technology eliminates the pulse droop behaviour observed in GaN HEMT power amplifiers thereby improving the range and sensitivity of pulsed mode radar systems. Additionally, NP12-0B is available with enhanced moisture ruggedness option and provides excellent humidity resistance when used in plastic packages.
Supporting full MMICs, the NP12-0B platform allows customers to develop compact pulsed or CW saturated power amplifiers for applications through 50GHz. This process is qualified for 28V operation, and in the 29GHz band generates saturated output power of 4.5 watts/mm with 12 dB linear gain and over 40 percent power added efficiency. The NP12-0B technology is ideal for rugged pulsed-mode high power amplifiers used in advanced radar systems.
NP12-0B has reached beta release and is available for early access MPW runs. Qualification testing is complete and final modeling/PDK generation is expected to conclude in August 2024 with full production release scheduled for late Q3 ’24.
WIN Semiconductors will be at the 2024 IEEE MTT-S International Microwave Symposium, in Washington, DC, June 16th through June 21st.
