Loading...
News Article

Bandgap and device engineering boost DUV LED efficiency

News
WHU team improves light extraction efficiency of AlGaN-based deep-ultraviolet LEDs via SiO2 insertion structure

Researchers from Wuhan University in China have unveiled a new approach to boost the performance of AlGaN-based deep-ultraviolet light-emitting diode (DUV LED) by employing tailored quantum wells and SiO2 insertion structure.

“We combine bandgap engineering with device craft to improve the radiative recombination efficiency and light extraction efficiency of the AlGaN-based DUV LED. Introducing the tailored quantum wells suppresses quantum-confined Stark effect (QCSE), thereby enhancing the radiative recombination efficiency of carriers in high-Al-content AlGaN quantum wells, " said Shengjun Zhou, a professor at Wuhan University who directed the research..

"In addition, employing the vertical SiO2 insertion structure not only improves the current distribution in the active region, but also deflects the transverse magnetic (TM)-polarised light to be emitted from the bottom of the flip-chip LEDs,” he added.

Compared with conventional mercury lamp, AlGaN-based DUV LEDs have longer lifetimes, greater stability, more environmentally friendly manufacturing and more flexible operation, however, the poor external quantum efficiency still hinders their further development owing to the strong QCSE and low TM-polarised light extraction efficiency.

At 850 mA, this DUV LED delivers an LOP up to 140.1 mW. More importantly, the external quantum efficiency of the DUV LED is 4.5 times greater than that of its conventional counterpart.

The team says the work provides a widely applicable strategy for fabricating high-power AlGaN-based DUV LEDs for the applications in biomedical testing, water/air purification, and other relevant fields.

Reference

‘Highly Efficient AlGaN-based Deep-ultraviolet Light-emitting Diodes: from Bandgap Engineering to Device Craft’ by Xu Liu et al; Microsystems & Nanoengineering, 10, 110 (2024).

SPONSOR MESSAGE

Secure Your Hydrogen Supply

A study supply of high-purity hydrogen is critical to semiconductor fabrication. Supply chain interruptions are challenging manufacturers, leading to production slowdowns and stoppages. On-site hydrogen generation offers a scalable alternative for new and existing fabs, freeing the operator from dependence on delivered gas.

Plant managers understand the critical role that hydrogen plays in semiconductor fabrication. That important job includes crystal growth, carrier gas, wafer annealing, and in the emerging Extreme UV Lithography (EUV) that will enable new generations of devices. As the vast need for semiconductors grows across all sectors of world economies, so does the need for high-purity hydrogen.

Take control with Nel on-site hydrogen generation.

Read more
Ascent wins order for power beaming Space PV module
Navitas Partners with Great Wall for 400V-DC power
SemiQ supplies SiC MOSFET modules for EV battery cell cyclers
Coherent and Keysight collaborate on 200G/lane multimode VCSEL tech
Lumentum and Marvell exhibit integrated 450G optical interface
Marktech announces new MWIR LEDS
Imec identifies stable range for GaN MISHEMTs in RF PAs
Polar Light completes $3.4m funding round
Lynred launches advanced thermal imaging modules
Altum RF expands Sydney design centre
Sivers announces partnership with O-Net
Ayar Labs unveils first UCIe optical chiplet
Aixtron delivers InP tool to Nokia
WHU-USTC team demo novel temperature monitoring of GaN device
Phlux lands £9m to take InGaAs sensors to next level
4-inch gallium oxide facility established in Swansea
Mazda and Rohm collaborate on automotive GaN
University of South Carolina chooses MOCVD tool from TNSC
Wolfspeed appoints new CEO amidst funding crisis
SiC slowdown is only short term, says Yole
Pragmatic launches flexible IGZO-based NFC chip
Poet ships latest optical engine samples
EU project to develop 1200V DC powertrain
£250m to turbocharge Welsh compound semi cluster
Scientists harness phonon-polariton electroluminescence
TU Graz team reveals the secrets of heat conduction
Aixtron to partner in ‘GraFunkL‘ UVC project
EU collaboration steps up heterogeneous design
Diodes Inc announces InSb sensors
Far-UVC module targets close-quarters disinfection
Sivers and WIN collaborate on DFB laser production
Boosting the blocking voltage of birectional HEMTs
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
x
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
x
Adblocker Detected
Please consider unblocking adverts on this website