Navitas previews new GaN and SiC tech at electronica
Navitas Semiconductor has announced it will preview several GaN and SiC breakthroughs at electronica 2024 (November 12th- 15th, Munich, Germany).
Amongst these will be new solutions for AI data centres, EV transportation, renewable energy, industrial drives, and consumer appliances.
Major technology updates include the world’s first 8.5 kW power supply for AI and hyperscale data centres, using high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs.
The company says its GeneSiC technology is designed to provide cool-running, fast-switching SiC MOSFETs and supports up to 3x more powerful AI data centres and faster charging EVs. The Gen-3 Fast GeneSiC MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, which is claimed to offer not only leading performance, but better robustness, manufacturability and cost than competitive devices. Gen-3 Fast MOSFETs deliver high-efficiency with high-speed performance, enabling up to 25°C lower case temperature, and up to 3x longer life than SiC products from other vendors.
Also on display will be the company’s latest development of GaNSense motor drives ICs for home appliance and industrial, 650V bi-directional GaN demonstrator for next generation, highest efficiency and power density solutions, as well as newly released SiCPAK modules for high-power markets such as power grid, renewables, EV charging, and UPS.
In addition to the exhibition, the company’s Llew Vaughan-Edmunds will take part in the EETimes panel debate ‘SiC & GaN Technologies - Exploring Advancements, Addressing Challenges’ (November 12th, 2:20 pm local time).
This debate will examine both recent and upcoming advances that will increase wide bandgap technologies’ share of the legacy silicon power IC market, which has been valued at $22bn/yr. The analyst house Yole Group predicts GaN and SiC products will make up 30 percent share of the power semi market by 2027.
