WIN Semis announces new 0.12μm GaN power process
Compound semiconductor firm WIN Semiconductors has launched a 0.12 μm gate-length D-mode GaN HEMT technology on SiC substrates, available for high volume production in Q3 2025. .
Engineered for high-power applications across K-Band to V-Band frequencies, with 28V operation, the process is said to incorporate multiple transistor improvements providing a combination of high breakdown voltage, enhanced linearity, and robust operation in continuous wave (CW) high-compression scenarios.
According to WIN, the technology’s source-coupled field plate design ensures a typical gate-to-drain breakdown voltage of 120 V, supporting high power density and system reliability.
NP12-1B targets high linearity amplifiers and is designed to meet the requirements for high-power microwave and mmWave communication systems, radar systems (including airborne, shipborne, and ground-based), electronic warfare and avionics, wireless infrastructure, ultra-wideband and broadband systems, and test & measurement equipment.
The demand for high linearity to minimise signal distortion and intermodulation is critical for maintaining signal integrity in densely packed spectral environments.
NP12-1B is supported by a complete Process Design Kit featuring both large-signal and small-signal models. A comprehensive qualification report is available upon request.
The process is available with an enhanced moisture ruggedness option, to provide excellent humidity resistance for use in plastic packaging.
