Finwave highlights new switch range and X-Microwave partnership
RF GaN company Finwave Semiconductor is showing its latest RF switch technology at IMS2026 in Boston. The company will debut eight new high-power RF switches and conduct demonstrations at the Thomas M. Menino Convention & Exhibition Center from June 7-12.
Built on Finwave’s GaN-on-Si platform, the company’s RF solutions are designed to combine the performance advantages of GaN with the scalability and cost efficiencies of high-volume silicon manufacturing. The portfolio supports a broad range of applications including communications infrastructure, Wi-Fi systems, satellite communications, radar, drones and counter-drone systems, test and measurement equipment, and medical technologies.
Finwave’s newest RF switch additions are said to deliver expanded power handling, higher frequency operation and ultra-low insertion loss in compact 4x4 mm QFN packaging designed to meet stringent SWaP-C (Size, Weight, Power and Cost) requirements for modern aerospace and defence systems.
FW2106, FW2107 and FW2108 are SPDT switches featuring enhanced Continuous Wave (CW) and pulse power handling with expanded frequency coverage for broadband RF applications. FW2109 is an ultra-broadband SPDT switch operating from 300 MHz to 18 GHz with 6W CW and 12W pulse power handling, optimised for electronic warfare and wideband communications systems. FW2124 is designed for X-band radar and satcoms, delivering 8W CW and 16W pulse power handling for demanding high-frequency environments. FW2118 and FW2110 are ultra-low-loss switches engineered for applications where minimising insertion loss is critical, supporting up to 12W and 40W CW power handling, respectively, and pulse power handling up to 80W. Finally, FW2198 is a high-performance SP4T switch supporting 20W CW and 40W pulse power handling at frequencies up to 10 GHz.
Partnership with X-Microwave
As part of its broader effort to expand access to its GaN-on-Silicon RF portfolio, Finwave has partnered with X-Microwave to accelerate RF prototyping and simplify RF module integration. Finwave switch products are now available as X-MWblocks from X-Microwave, including the FW2001, FW2002 and FW2003, supporting power handling up to 30W and frequencies up to 12 GHz.
“Finwave continues to expand the capabilities of GaN-on-Silicon technology with RF switch solutions designed to meet the increasing performance demands of next-generation communications, aerospace and defence systems,” said Finwave Semiconductor CEO Pierre-Yves Lesaicherre. “Our latest products combine high power handling, high frequency, fast switching, broadband operation and compact integration, while partnerships with companies like X-Microwave help customers move more quickly from evaluation and prototyping to real-world system deployment.”
