WIN Semi qualifies 0.12μm GaN process for 40V
Taiwanese pure-play compound semiconductor foundry WIN Semiconductors has qualified its NP12-0B process for 40V operation, making it suitable for high performance front-end products used in next generation radio access networks, satcoms and radar systems.
This 0.12 μm gate-length GaN-on-SiC technology integrates multiple transistor improvements providing high ruggedness when operated in deep-saturation/high-compression pulsed and CW conditions.
These enhancements mean that NP12-0B has now satisfied qualification testing for reliable 40V operation of power amplifier, T/R switch and single-chip front-end MMICs.
For high performance amplifiers, output transistors tuned for maximum power at 18GHz and 40V provide 7.9 W/mm Psat, 13.3dB gain and 42 percent PAE. When tuned for maximum PAE, the same power cell exhibits 6.1W/mm Psat, with 14.6 dB gain and 55 percent PAE at 18GHz. When used in a switch configuration, common-gate devices show insertion loss below 0.4db, power handling greater than 42dBm, with sub 20nS switching speed using a 40V control voltage.
Adding to its power capabilities, WIN says that NP12-0B also provides excellent noise figure with typical Fmin of 1 dB with 10dB associated gain at 20GHz.
The NP12-0B platform has been in production since 2024 and is available with the Enhanced Moisture Ruggedness option which provides excellent humidity resistance for use in plastic packaging. The updated 40V Process Design Kit (PDK) supporting PA, switch and LNA designs will be available for customer download in Q2 2026.
The NP12-0B and WIN’s entire GaN, GaAs and InP technology portfolio will be on show at the 2026 IEEE MTT-S International Microwave Symposium being held in Boston, MA, June 7-12
