Atomic layer processing advances silicon carbide quantum photonic circuits
Researchers from the Max Planck Institute for the Science of Light and the Fraunhofer Institute for Integrated Systems and Device Technology IISB are advancing silicon carbide as a key material platform for next-generation photonic integrated circuits through the ALP-4-SiC project.
The initiative focuses on applying atomic layer processing techniques to improve the optical performance of silicon carbide-based microphotonic devices, supporting the development of scalable quantum photonic circuits.
Silicon carbide is gaining attention as a promising platform for photonics and quantum technologies due to its wide bandgap, compatibility with CMOS processes, and ability to host optically active colour centres that can operate at room temperature.
Within the project, researchers are using atomic layer etching to reduce surface roughness in silicon carbide waveguides and ring resonators, a critical step in minimising optical losses and enabling high-quality photonic components for integrated quantum systems.
The research addresses a major challenge in quantum photonics, translating complex laboratory optoelectronic systems into compact and manufacturable chips.
By improving photon confinement and reducing scattering losses, the work supports advanced functionalities such as nonlinear optical effects, optical frequency comb generation, and chip-scale photonic switches, which are essential building blocks for future quantum communication and computing platforms.
The ALP-4-SiC project combines the Max Planck Institute’s expertise in photonic design and characterisation with Fraunhofer IISB’s strengths in silicon carbide semiconductor technology and atomic layer processing.
Fully funded by the German Federal Ministry of Research, Technology, and Space under the WiVoPro programme, the initiative aims to bridge basic research and industrial process development, laying the groundwork for silicon carbide-based quantum photonic integrated circuits.
