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Chicony picks Infineon CoolGaN G5 chips

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New G5 transistors provide design headroom to push power density and efficiency into a compact adapter footprint

Infineon has announced that notebook adapter maker Chicony Power, has selected the company’s CoolGaN transistors G5 to power multiple laptop adapters designed for a top customer’s notebooks.

The company says that the design demonstrates how GaN power semiconductors are accelerating the transition to more compact, energy-efficient charging solutions, enabling smaller form factors and improved sustainability for mainstream computing.

At the heart of the new adapter design are CoolGaN Transistors G5, engineered for fast switching and low conduction losses across wide operating conditions.

These high-voltage (HV) GaN transistors feature a design called hybrid-drain GIT (Gate Injection Transistor), that is claimed to provide rugged HV gate functionality, superior dynamic Rdson & hard switching performance and much higher saturation current all resulting in best overall reliability.

Building upon this foundation, Infineon’s newest HV family, the G5 transistors, features up to 30 percent better performance in standard figures-of-merit, e.g. RDS(on)*Qg, compared to its predecessor.

“The CoolGaN Transistors G5 embody our commitment to reliable, high-performance power semiconductors. Partnering with Chicony Power on the top customer’s adapter underscores how GaN enables tangible end-user benefits – smaller size, faster charging, and lower energy consumption – without compromising robustness,” said Johannes Schoiswohl, head of the GaN Business Line at Infineon.

“Infineon’s CoolGaN Transistors G5 give us the design headroom to push power density and efficiency into a compact footprint. This collaboration helps deliver charging solutions aligned with the premium user experience our notebook customers expect,” said Yang Wang, VP R&D of Chicony Power.

Engineering highlights driven by Chicony Power design capabilities with use of Infineon’s HV G5 GaN transistors include a high frequency power architecture with optimised PFC and DC/DC stages leveraging GaN’s fast switching feature, an EMI-aware design whereby layout, filtering, and switching profiles are tuned to deliver low noise and strong compliance margins, and thermal optimisation enabling cooler operation and sustained output at 100-300 W in compact mechanical envelopes.

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