Infineon GaN Insights 2026
Infineon has published the 2026 edition of its annual GaN Insights, looking at the growing adoption of GaN power solutions.
“GaN has become a market reality that has gained traction across various industries,” said Johannes Schoiswohl, head of GaN Systems Business Line at Infineon.
According to analysts, the GaN power semiconductor market is expected to reach almost $3b by 2030, marking a 400 percent increase compared to the 2025 market [1]. This rapid growth is driven by significant production ramps, which began in 2025, broadening GaN adoption across multiple industries and enabling its penetration into new applications.
In fact, the market is expected to grow at a compound annual growth rate (CAGR) of 44 percent from 2025 to 2030 [2], with revenue projections of $920m in 2026, representing a 58 percent growth over 2025 [3].
Advancements in GaN product innovation
In 2026, designers are expected to uncover new uses of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon's high-voltage bidirectional GaN switches feature a revolutionary common drain design with a double gate structure, leveraging proven Gate Injection Transistor (GIT) technology.
This architecture enables the use of the same drift region to block voltages in both directions, resulting in a significantly reduced die size compared to conventional back-to-back arrangements. For instance, using Infineon’s CoolGaN BDS, which operates up to 1 MHz, solar microinverters deliver 40 percent more power in the same-sized inverter while reducing system costs.
GaN technology is expanding into new applications
GaN is expanding into various industries, including AI data centres, robotics, electric vehicles, renewable energy, and emerging fields such as digital health and quantum computing. In the data centre market, GaN-based power supplies with new topologies are achieving higher than ever efficiencies and power densities, reducing power losses by up to 30 percent and enabling the deployment of more efficient and compact data centre architectures. GaN-based motor drives used in humanoid robots can be 40 percent smaller in size and increase fine movement control.
Why Infineon and Infineon GaN?
Empowered by 300-millimeter GaN wafer manufacturing, Infineon says it GaN products demonstrate exceptional performance leading to application advantages. For instance:
The new CoolGaN Transistor 650 V G5 generation of products have figures-of-merit, a product of conduction loss and switching loss, 30-40 percent better than others in the industry substantially increasing system performance and design degrees of freedom.
Infineon’s innovative CoolGaN Transistor MV G5 products have monolithically integrated a Schottky diode resulting in 15 percent lower losses and >10 percent lower device temperature translating to reduced size and cost with higher efficiency and reliability.
Bolstering its position as a leader in automotive semiconductors, Infineon’s new CoolGaN Automotive 100 V product meets the rigorous requirements of the AEC-Q101 standard to address the application shift from 12 V to 48 V systems in the newest generations of automobile architectural designs.
With a broad portfolio of over 50 GaN products, offering both discrete and highly integrated solutions, spanning voltages from 40 V to 700 V targeted for consumer, industrial, and automotive applications, Infineon provides an extensive set of solutions covering a wide range of power applications.
The GaN Insights eBook, available on Infineon's website, explores the current state of GaN technology, products, their applications, and the opportunities and challenges that lie ahead.
[1] Yole Group: Power GaN 2025 Report. https://www.yolegroup.com/product/report/power-gan-2025/
[2] TrendForce: 2025 Global GaN Power Device Market Analysis. https://www.trendforce.com/research/download/RP250731KZ
[3] Yole Group: Power GaN 2025 Report. https://www.yolegroup.com/product/report/power-gan-2025/
