Freiberger produces first 200 mm semi-insulating GaAs wafers using VGF technology
Freiberger is an established manufacturer of GaAs substrates using the liquid-encapsulated Czochralski (LEC) crystal growth method, and has also developed its own VGF growth technology. While LEC is a more economical production process, VGF wafers feature different characteristics, such as a lower etch pit density, which can be an advantage in certain applications. The VGF process is now in full production at Freiberger for 100 mm and 150 mm wafers. Freiberger is the only GaAs wafer producer offering both LEC and VGF technologies.
At the American Conference on Crystal Growth and Epitaxy (ACCGE-12) in August 2000, Freiberger presented the world s first 200 mm GaAs wafers obtained from LEC-grown crystals. The new VGF-grown 200 mm wafers were fabricated as part of a new R&D project funded by the German government.
Future applications for semi-insulating GaAs will benefit from the larger 200 mm wafer diameter because increased wafer size is the key to higher production efficiency and cost savings in semiconductor fabs. In addition, the availability of 200 mm GaAs wafers will allow fabs to use state-of-the-art processing equipment designed for 200 mm silicon processing.
Freiberger Compound Materials GmbH
Freiberg, Germany
Tel. +49 3731 280 0
Fax: +49 3731 280 106
E-mail: info@fcm-germany.com
Web site: http://www.fcm-germany.com
