Kyma Technologies ships 2-inch single crystal GaN substrates
GaN substrates are expected to allow GaN-based device manufacturers to eliminate processing steps and improve device quality compared to growth on other substrates such as sapphire and silicon carbide. GaN substrates are exactly matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices such as blue, green, UV and white LEDs, blue-violet lasers, and microelectronic devices. Lattice matching eliminates stress and defects induced by growing GaN epilayers on non-nitride substrates.
Kyma Technologies, Inc. has been focused on improving the quality of high purity GaN since 2000, when it received funding through a Missile Defense Agency (MDA, formerly BMDO) SBIR contract to explore the feasibility of developing GaN materials. Since then, Kyma has received additional contract awards to expand GaN research efforts.
"The research Kyma is conducting on large area GaN substrates surpasses the efforts of other groups in this area," said Boris Peres, Director of Research at Emcore. "Emcore believes that Kyma s GaN substrate technology will have a broad-based impact on nitride-based devices such as blue lasers and microelectronic technologies."
The 2 inch GaN substrates will be commercially available by the end of the second quarter of this year, and development of 4 inch GaN wafers is underway.
Ed Pupa
CEO, Kyma Technologies
Tel. +1 919 789-8880
or
Wendy Helmick
Tel. +1 919 465-2062
E-mail: epupa@kymatech.com
Web site: http://www.kymatech.com
