+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
News Article

Yale University buys Aixtron reactor for AlGaInN epitaxy

Yale University of New Haven, Connecticut, has ordered an Aixtron AIX 200/4 RF-S MOCVD system and entered into a joint R&D contract with Aixtron to develop GaN optoelectronic devices and structures.

"[Aixtron s reactor] will be a useful tool to enable Yale to explore and advance the science and technology of AlGaInN-based materials," said Yale University s Jung Han. "We are pleased with the all-round support that Aixtron offers. The cooperation agreement will provide us with technology and support at the forefront of this advanced material technology." Claus Ehrenbeck
Tel: +49 241 8909 444
Fax. +49 241 8909 445
E-mail: C.Ehrenbeck@aixtron.com
Web site: http://www.aixtron.com

×
Search the news archive

To close this popup you can press escape or click the close icon.
×
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • View all news 22645 more articles
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: