Nichia large-area LED increases power by 10-fold
"Assembly manufacturers need components that are easy to install," said Noboru Tazaki, managing director and general manager of Nichia s Optoelectronics Products Division. "Nichia s high power LEDs represent advanced technology, but more importantly the parts can be mounted with automated assembly equipment."
The new LEDs overcome the low power limitations of LEDs by increasing the area of the InGaN chip to 1 mm square and powering the chip with up to 2 W of electrical power. Using a current of 350 mA, the photometric luminous flux for packaged LEDs has been measured to be 23 lm for white, 7 lm for blue, 28 lm for blue-green, and 20 lm for green.
Nichia has developed two new packages to house the larger area InGaN chip. The NSCx180F is inorganic, with no organic plastics or organic resins used. As a result, the package is resistant to the increased heat generated by larger area chips and is ideal for housing InGaN-based UV LED chips. Samples of the NSCx180F include InGaN an device that emits nearly 100 mW of 380 nm UV light at 500 mA - a world first. The thermal resistance of the NSCx180F is 15 °C/W; the pack is 10 mm square and 2.3 mm high and has an estimated lifetime of 100,000 hours.
The second new package, the NSCx190D, dissipates heat using an integrated copper heat sink. The result is a packaged device with an 8 °C/W thermal resistance, or approximately twenty times lower than conventional LED packages. The new package features a resin optic lens, making the part well suited for channel letter displays, traffic signals and other specialty lighting applications. The NSCx190D is 11.2 mm wide, 7.2 mm long and 6 mm high, with an estimated lifetime of 50,000 hours.
Engineering samples of the new LEDs will be available in the second quarter of calendar 2002.
Matthew Quint for Nichia
Tel: +1 650 599-9450
E-mail: mquint@quintpr.com
Web site: http://www.nichia.co.jp
