AXT announces six inch diameter InP substrates
The announcement marks a further gathering of momentum in the development of six inch InP wafers. Showa Denko recently became the first company to announce it had successfully developed six inch InP wafers using its LEC technology SDK develops 6 inch InP wafers . AXT s new six inch InP substrates are have been developed using the company s proprietary vertical gradient freeze (VGF) crystal growth technology, enabling it to produce large diameter compound semiconductor substrates of high uniformity and low defect density. Large diameter substrates are critical to the production of high performance electronic and opto-electronic integrated circuits, such as RFICs for cellular and other wireless communication systems.
"AXT has always been at the forefront of compound semiconductor substrate technology and our reward for pioneering new products has been uninterrupted market share dominance leadership in both gallium arsenide and indium phosphide large diameter substrates," said Morris Young, AXT s president and CEO. "We are very pleased to announce this breakthrough and believe that our products will continue to serve as the basis for many important technologies in wireless and telecommunications infrastructure."
Indium phosphide-based semiconductor devices provide extremely high frequency electronic performance and are used in applications in which other semiconductor materials, such as silicon and GaAs, are unable to perform. For example, InP-based devices are expected to play a role in the 3G cellular phones and communications systems with bit rates of 40 Gbit/s and higher, such as the OC768 communications protocol. InP-based devices are already widely used for fiber optical communications components, such as lasers and detectors with wavelengths of 1,000 nm and longer.
Chris Bunn
Director, Investor Relations
+1 510-438-4782
E-mail: Chris.Bunn@axt.com
Web site: http://www.axt.com