JMAR awarded $10 million for X-ray lithography mask development
The contract is in addition to the company’s $34.5 million DARPA funding announced in February 2002 for the construction of a 1 nm X-ray point-source lithography system.
JMAR/SAL has awarded IBM Microelectronics Division of Essex Junction, VT, a $3 million subcontract to design, produce and deliver up to 50 masks during the contract’s first year. The masks allow the transmission of X-rays to make the desired patterns and are based on tantalum silicon absorbers on 2.0 µm thick SiC mounts.
“We are delighted to have the IBM next generation lithography mask organization, the world’s experts in this field, join the JMAR PXL team,” said Robert Selzer, senior VP for technology. “This is clearly a major step forward in our effort to deliver proximity X-ray lithography to the semiconductor industry.”
