GCS anticipates increased demand for InGaP HBTs
GCS says it has identified a 6-inch foundry partner to continue increasing high volume production capacity, which is anticipated sometime in 2003. Included in its strategic plan is the long-term goal of establishing manufacturing facilities in Taiwan and Mainland China.
“Our InGaP HBT wafers have been qualified by domestic, Japanese and European customers for volume production,” said GCS’ founder and CSO, Owen Wu. “Wafers from these volume programs are targeted for handsets, wireless infrastructure such as base stations, OC-192 telecommunications infrastructure and the burgeoning WLAN market.”
“Power amplifiers produced from GaAs technology meet the higher performance requirements of WLAN at 5.7GHz, which is still challenging for silicon, and also offers performance advantages over silicon for 2.4 GHz operation,” added Wu. “We believe that WLAN PAs will be the next killer application for GaAs technology, requiring large volumes of wafers in the second half of 2002.”
