Emcore wins $4 million contract from DARPA to develop GaN-based electronic devices
"This initiative is critical for transforming the well-known science of wide bandgap semiconductors into a viable technology that the we can depend on for the design and acquisition of the next generation of military sensor and communication systems," said DARPA program manager Edgar Martinez.
"Emcore was selected for this project because of the proven ability of their process technology and unparalleled epiwafer production experience. The company has already demonstrated the ability to commercially produce FETs on two-inch wafers, while reaching industry-leading levels of uniformity and reproducibility," added Martinez. "The scalability of their technology will enable them to achieve these high quality materials results on four-inch wafers, which will be essential for the establishment of the infrastructure that can support the manufacturing of affordable RF and analog components."
"Emcore is honored to be working with DARPA on such a critical project and we are confident that our technology and TurboDisc production platforms can achieve high quality GaN materials production on four-inch substrates," said Reuben Richards, CEO and president of Emcore.
