Hoya launches a SiC venture
Hoya first developed single-crystal cubic SiC substrates in December 2000 and the new venture will now use the company s technologies and patents to fabricate high quality, large-area cubic SiC substrates.
"The new company has exclusive rights to Hoya s technologies and patents," said Fumio Kitahara, Hoya Advanced Semiconductor Technologies new CEO. "These technologies and patents govern the manufacture of cubic SiC substrates at high growth rates, while decreasing the crystal defects that degrade performance."
Hoya has already invested Yen 350 million ($2.8 million) in its new venture and plans to increase its spending to Yen 2.6 billion ($21 million). Currently employing 10 researchers and engineers, the company s annual revenues are expected to reach Yen 4 billion ($32 million) by 2007.
"We will promote alliances with companies and universities worldwide in order to expand the wide bandgap semiconductor market as quickly as possible," added Kitahara.
