UEC develops 10 W AlGaInP-on-silicon LEDs
UEC says that the new high-power AlGaInP LED chip can be operated at more than 5 A without saturation. The total flux is more than 200 lumens in a single chip.
The company demonstrated its new product to Taiwanese LED packaging manufacturers in June.
To further improve the high-power performance of its LEDs, UEC is improving a new technology that will bond the AlGaInP LED epiwafer to a metal heatsink such as aluminum or copper. Samples of this AlGaInP-on-metal high-power LED will be released later this year.
UEC has been developing its AlGaInP-on-silicon substrate metal-bonding technology over the last three years. The company has already had 2 patents granted related to this technology, with 9 other patents pending. UEC will start to mass-produce these high-power chips with three chip sizes (0.3 mm x 0.3 mm, 1 mm x 1 mm and 2.5 mm x 2.5 mm) from the fourth quarter of this year.
UEC has also developed a 650 nm AlGaInP resonant cavity (RC) LED. The main application for the device, which meets the IEEE 1394b standard, is home networking. It has a 3 dB bandwidth of 120 MHz at 20 mA and a typical output power of 1.5 mW at an operating voltage of approximately 2 V.
