News Article
SiXON to double production capacity
SiC substrate maker, SiXON, plans to build a new plant and increase output capacity to 2000 wafers a month.
SiXON, a SiC substrate manufacturer in Kyoto, Japan, is preparing to double its output capacity of 2 inch SiC substrates reports the Japanese news source Nihon Keizi Shimbun (NKS).
The company plans to build a 2500 sq.m fabrication plant in April of next year that will cost up to Yen 300 million ($2.6 million). This plant will also be cited in Kyoto.
SiXON currently manufactures 2-inch 6H- and 4H-SiC substrates with micropipe densities of less than 100/cm2. According to NKS, with the opening of the new plant, SiXON will relocate all of its existing operations to the factory and double production capacity to 2000 substrates a month.
The company also plans to start shipping 4 inch wafers as the new plant opens, and hopes to increase the capacity across the old and new plant to 10,000 substrates a month within two years.
