Communicant and IHP break SiGe:C device records
ICs with a ring oscillator gate delay of 4.2 ps have been demonstrated. This is the fastest yet reported for a BiCMOS technology. The high performance HBT module give ft and fmax values of 200 and 170 GHz respectively, with a BVCE0 of 2.0 V.
The process uses a low number of additional lithography levels, eliminating complex processes such as subcollector epitaxy and deep trenches. The benchmark circuits fabricated include 53-stage CML ring oscillators, static and dynamic dividers, and LC oscillators, with the last substantially exceeding previously reported highest speeds for silicon-based ICs.
“We are very excited about the new benchmarks with our SiGe:C BiCMOS technology,” said Communicant CEO, Abbas Ourmazd. “Communicant and the IHP are working toward establishing Germany as a global technology center for communication-enabled integrated circuits. Such IC’s are at the core of nearly all next-generation electronic products.”
Further details of the process and device performance will be revealed in a presentation at the International Electron Devices Meeting (IEDM) in San Francisco in December.
