ATMI awarded $9.46 million for GaN research
The work at ATMI will involve the development of bulk growth techniques for large area semi-insulating GaN substrates and highly uniform GaN and AlGaN epitaxial processes. The contract will run for 18 months with an option to extend the work for a further six months.
ATMI will not work alone on the project. DARPA requires its contractors to the WBSTI to work closely with others in the development of materials and processes. ATMI’s subcontractors in the new project will include NIST, the State University of New York at Stony Brook, and TRW for materials characterization. TRW will assess ATMI’s material through device fabrication and testing. Others working closely with ATMI on the contract include TriQuint and Raytheon which will also provide device fabrication and testing services, and Sterling Semiconductor which will supply SiC substrates.
The WBSTI will be the subject of an article in the November issue of Compound Semiconductor magazine.
