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New record for stimulated emission in AlGaN/AlN

Sensor Electronic Technology and Crystal IS have observed deep UV stimulated emission in AlGaN/AlN-based quantum well structures at a wavelength of 258 nm.
Two specialist developers of nitride-based materials and devices, Sensor Electronic Technology, Inc. (SET) and Crystal IS, Inc., have observed the shortest stimulated emission wavelength reported to date in semiconductor materials.

Deep UV stimulated emission at a wavelength of 258 nm was observed under optical excitation in AlGaN/AlN-based quantum well structures grown over single-crystal bulk AlN substrates by MOCVD.

The work is a result of the joint technology development agreement between the two companies, which takes advantage of a unique combination of AlN substrate technology at Crystal IS and expertise in AlInGaN-based epitaxial materials and devices at SET. A technical description of the work will be published in the December 9, 2002 issue of Applied Physics Letters.

"This is a significant milestone in our joint effort to develop and commercialize semiconductor light emitters in the deep-UV spectral range," said Remis Gaska, president and CEO of SET. "The observation of stimulated emission is a clear evidence of the high quality of the AlGaN-on-AlN material, which is a key factor in the fabrication of LEDs and especially laser diodes."

Further development of this work will be funded by a Phase I small business innovative research (SBIR) award from the Defense Advanced Research Projects Agency (DARPA) for $100,000. The project is to demonstrate the feasibility of constructing deep-UV LEDs and laser diodes with alloys of aluminum and gallium nitride grown on AlN substrates.

The development of semiconductor-based UV light sources is of critical importance to the military. Miniaturized UV light sources have application in biological agent detection, non-line-of-sight (NLOS) covert communications, water purification, equipment/personnel decontamination, and white light generation. DARPA is interested in exploiting "the unique characteristics of wide bandgap semiconductors to produce optical sources operating in the ultraviolet portion of the spectrum that can be integrated into modules and subsystems to address these applications."

This award from DARPA is the latest in several government contracts for both Sensor Electronic Technology and Crystal IS. SET has recently been awarded two Army/SMDC contracts and five Phase I SBIR awards from the Missile Defense Agency for the development of AlInGaN-based high microwave power transistors on SiC and AlN substrates. Crystal IS has a $1.6 million contract with DARPA to develop large-diameter AlN substrates.

Using proprietary techniques developed by Crystal IS, the AlN substrates used for this work were sliced from bulk AlN crystals. The dislocation density in these substrates was measured to be less than 1,000 /cm2. This low defect density is believed to be crucial to the successful development of deep-UV LEDs and laser diodes. To date, AlN crystal growth has been limited to substrates less than 15 mm in diameter, which are suitable for device prototyping. Crystal IS is currently developing a process that will allow the growth of 50 mm diameter crystals and expects to have limited supplies of substrates of this size available in 2003.

About Sensor Electronic Technology
Sensor Electronic Technology, Inc. is a start-up business with the strategic goal to commercialize proprietary III-Nitride (GaN, AlN, InN and their alloys) semiconductor technology and become a major supplier of materials and devices for emerging high-power RF electronic, ultraviolet optoelectronic and solid-state lighting markets. Founded in New York State by two Rensselaer Polytechnic Institute scientists, Remis Gaska and Michael Shur, SET received its first funding in 2000. In August 20002, the company moved all of its operations to the main facility in Columbia, SC.

About Crystal IS
Crystal IS, Inc. was formed in 1997 by two Rensselaer Polytechnic Institute scientists and researchers, Leo Schowalter and Glen Sack. Their goal is to grow high quality, large-diameter single crystal substrates for the nitride semiconductor industry. Crystal IS has also developed proprietary techniques to chemically and mechanically polish AlN substrates in preparation for epitaxial growth.

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