Anritsu designs new photodetector
The improved efficiency is the result of changes to the epitaxial structure that gives layers of high and low refractive indices to ensure that any light not absorbed in the InGaAs absorbing layer is reflected back into the layer rather than out of the device. Details of the structure are available on Anritsu’s website
The company says that the detector can generate sufficient electric power even when the optical input power is half of that typically required for photodetectors to function adequately. As a result, using the new photodetector reduces the need for optical amplification to boost signals, thus reducing component costs.
The company plans to begin manufacturing devices with the new structure in February and says it will be priced at the same level as existing photodetector products.
