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GaAs and SiGe IC market to grow at 22% annually

IC Insights predicts that the market for compound semiconductor ICs will grow at an annual rate of 22% through 2007, with SiGe gaining significant market share.
According to IC Insights, a market research firm based in Scottsdale, Arizona, the compound semiconductor IC market will experience an average annual growth rate of 22 percent from 2002 through 2007. In comparison, the total IC market will grow at a rate of 10 percent over the same time period.

The IC Insight data indicates that the compound semiconductor IC market peaked at $2.42 billion in 2000, but fell to $1.69 billion in 2002. The company forecasts strong growth in 2003, when the market will reach $1.96 billion, and continual expansion through 2007, when the market will have more than doubled to $4.65 billion.

Compound semiconductor ICs are still largely based on GaAs, which accounted for 87 percent of the market in 2002. However, IC Insights’ recently-released McClean Report 2003 study shows that SiGe is expected to display the strongest growth in demand in the coming years, achieving a marketshare of 33 percent by 2007.

The main advantages of SiGe are due to its compatibility with conventional silicon CMOS processes. That means SiGe chips can benefit from the economies-of-scale that today’s high-volume 200 mm (and soon 300 mm) silicon wafer fabs can provide, thereby lowering per-die costs.

A second, and perhaps more compelling, reason SiGe is an attractive technology option is the ability to merge the advantages of CMOS technology in low-power, high-density digital circuitry with the high speed of the SiGe HBTs. This can lead to the creation of advanced BiCMOS processes ideally suited for highly integrated mixed-signal ICs for communications applications.

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