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JMAR wins $3.4 million to develop X-ray masks

JMAR has received further funding to procure X-ray masks as part of its ongoing program to develop a sub-100 nm lithography system.
JMAR Technologies, a developer of advanced lasers, lithography systems and semiconductor production services, has been awarded an additional $3.4 million in funding from the US Naval Air Warfare Center to procure sub-100 nm geometry next-generation lithography (NGL) masks.

The X-ray masks procured through this program are being used to develop and produce high-performance GaAs MMICs, for use in military and commercial radar, communication, and space-borne applications. The award, funded by the Defense Advanced Research Projects Agency (DARPA), extends by one year the mask production program initiated in May 2002.

The masks are required to produce MMICs using JMAR’s new Collimated Plasma Lithography (CPL) system, which is currently undergoing integration testing at the company’s Burlington, VT facility.

JMAR has subcontracted IBM Microelectronics in Essex Junction, VT to produce masks through the duration of this phase of the contract, which ends March 31, 2004.

Bob Selzer, Mask Program Manager said, “This award is a logical follow-on of the 130nm mask program just completed. During 2003 and 2004 we expect to design CPL masks that demonstrate the extendibility of the CPL technology into the sub-100nm regime.”

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