ASTM F1.15 subcommittee seeks participation
Within the ASTM F1 committee on Electronics, F1.15 has supplied various Test Methods to support the SEMI Compound Semiconductor Wafer Committee, which was started almost 20 years ago. More recently, the subcommittee has set up three Task Groups, described below, and is planning a fourth on frontside processing.
"Interested parties can become involved by providing feedback on the Backside Processing Practice Draft, and also by joining F1.15 and becoming active in the various Task Groups," says Austin Blew, F1.15 chairperson. "We will be having a meeting with the rest of ASTM F1 in Denver on June 17, which will also include a teleconference with those unable to attend in person."
Backside Processing Task Group
Led by Maria Huffman of Agilent, this group is looking for feedback on its new Practice Draft. Electronic copies are available from Scott Orthey, ASTM F1 Manager (sorthey@astm.org).
Feedback, comments and corrections should be sent to Maria Huffman (maria_huffman@agilent.com) and Austin Blew (austin@lehighton.com).
Mobility Round Robin Task Group
Led by Danh Nguyen of Lehighton Electronics, this group is conducting a PHEMT mobility round robin per ASTM Test Method F-76. The group hopes to improve F-76 and also a SEMI-proposed Nondestructive Test Method by using and comparing destructive and nondestructive test methods.
The goal is to have certified reference material available in the future as well as methods to separate the mobility and sheet charge density measurements of the 2DEG channel from the cap layer.
Backside Processing Metrology Task Group
Led by Tom Parsons of Insaco, Inc. this group is presently drafting a new ASTM test method to measure sapphire, which will include measurements of sori, sag, total thickness variation (TTV) and restrained flatness, similar to ASTM Test Methods F-657, F-1390 and F-1451 which pertain to silicon wafers.
This new test method will be used to measure sapphire carriers used in thinning wafers, as well as other sapphire applications.
