Crystal IS participates in DARPA SUVOS program
"Single crystal native AlN substrates have the potential to enable the fabrication of high performance deep UV optical sources such as those sought under the SUVOS program," said Jon Whitlock, CTO of Crystal IS.
Crystal IS recently announced the availability of limited quantities of ultra-low dislocation density a-plane, m-plane, and c-plane AlN substrates.
Whitlock says that native AlN substrates are an excellent choice for such applications, since they have record low dislocation densities, coupled with excellent matches in crystal structure, lattice constant, and thermal expansion coefficient.
Current efforts to improve substrate size and uniformity and to better understand the role of impurities could lead to the development of cost-effective sensors based on deep UV optical sources.
"The goals of the DARPA SUVOS program appear to be very well aligned with the strong technological benefits and commercialization potential of native AlN substrates," said Leo Schowalter, co-founder, president and CEO of Crystal IS. "Additionally, we are extremely pleased and proud to participate in this program of strong national security interest."
