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Cree develops 100 mm semi-insulating SiC wafers

Cree has demonstrated the capability of producing a 100 mm 4H semi-insulating silicon carbide substrate.
The announcement was made during a presentation at the Electronic Materials Conference in Salt Lake City, Utah.

Cree says that the news represents a milestone in the advancement of single crystal SiC, and a key to future production of SiC and GaN RF components and systems.

The increased surface area of these larger wafers should allow Cree to almost double the number of devices on each wafer versus current production on Cree s 3 inch SiC high-purity semi-insulating (HPSI) wafers.

Robert Glass, VP and general manager of Materials at Cree, stated, "The demonstration of a 100 mm HPSI substrate builds directly on our three inch HPSI program, and validates Cree s commitment to developing products directed at the needs of the commercial market."

Cree says that it has received tremendous support in its efforts to develop advanced SiC substrates from the Defense Advanced Research Projects Agency (DARPA).

"When commercially available, we believe these 100 mm substrates can be run on current GaAs, and other compound semiconductor, 100 mm RF production equipment," said Cree s executive VP of Advanced Devices, John Palmour.

"Likewise, it will allow Cree to convert its wide-bandgap RF fabrication line to 100 mm once the substrates are available in production volumes, which we believe could enable further reductions in component costs."

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