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Veeco commences MBE collaboration with UCSB

Veeco and the University of California Santa Barbara have entered a collaboration to develop and transfer MBE growth processes for various device structures, including HBTs, lasers and VCSELs.
The University of California Santa Barbara (UCSB) and Veeco Instruments have signed a collaborative agreement whereby UCSB will transfer MBE growth processes for wireless and optical telecommunications devices to Veeco’s epitaxial Process Integration Center (PIC).

Under the agreement, UCSB will demonstrate the growth processes, and provide Veeco PIC scientists with the recipes required to grow non-proprietary versions of a number of device structures.

The devices are carbon-doped InP HBTs; metamorphic HBTs (InAlGaAs); 980 nm edge-emitting lasers; InP/InAlGaAsP 1.5 m edge-emitting lasers; and 980 nm VCSELs.

“We are excited to get these processes and training from one of the world’s leading engineering universities,” said Hwa Cheng, director of the PIC.

"These processes were developed at UCSB on our single-wafer GEN II R&D systems," continued Cheng. "This agreement will let us duplicate the processes on multi-wafer GEN200 production systems at the PIC."

High-volume manufacturers of the above-mentioned devices can now receive both a proven tool and process when they select a production MBE system from Veeco, says Marlin Braun, general manager of Veeco MBE operations.

"Since the process is pre-qualified on the PIC GEN200, customers can lower their risk and speed their time to market once their new GEN200 arrives," said Braun.

Veeco opened the 15,000 sq. ft PIC adjacent to its MBE manufacturing operations in St. Paul, MN in March 2003.

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