SET demonstrates 4 inch GaN HFET epiwafers
The growth of 100 mm HFET wafers was demonstrated using a proprietary MOCVD reactor designed and built at SET, in combination with a novel hybrid epitaxial growth technology.
The novel wafer growth process integrates conventional MOCVD with a process that SET calls Migration Enhanced (ME) MOCVD. This process allows for material deposition at reduced temperatures and rates comparable to those used in MBE technology.
"Demonstration of high quality 4-inch HFET wafers is a significant victory for our systems and growth engineers," said Remis Gaska, president and CEO of SET.
"It shows the potential of our proprietary growth tools and material deposition, and is a big step toward commercialization of our AlInGaN-based high power transistor technology."
The HFET epiwafers are designed for fabrication of ultra-high power transistors, which are key building blocks for microwave power amplifiers (MPAs).
MPAs are components in transmit/receive modules of both military and commercial radar and communications systems, including networks of basestations for wireless communications.
The development of large diameter III-nitride epiwafers at SET has been supported by the Defense Advanced Research Project Agency (DARPA).