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SET demonstrates 4 inch GaN HFET epiwafers

Sensor Electronic Technology, Inc. (SET) has demonstrated III-nitride based heterostructure FET (HFET) wafers grown on 4 inch (100 mm) diameter sapphire substrates.
A sheet resistance of less than 500 ohm per square has been achieved with a standard deviation across a 4 inch diameter wafer of less than 5%. SET claims this is comparable to the best characteristics of currently available 2 inch HFET wafers.

The growth of 100 mm HFET wafers was demonstrated using a proprietary MOCVD reactor designed and built at SET, in combination with a novel hybrid epitaxial growth technology.

The novel wafer growth process integrates conventional MOCVD with a process that SET calls Migration Enhanced (ME) MOCVD. This process allows for material deposition at reduced temperatures and rates comparable to those used in MBE technology.

"Demonstration of high quality 4-inch HFET wafers is a significant victory for our systems and growth engineers," said Remis Gaska, president and CEO of SET.

"It shows the potential of our proprietary growth tools and material deposition, and is a big step toward commercialization of our AlInGaN-based high power transistor technology."

The HFET epiwafers are designed for fabrication of ultra-high power transistors, which are key building blocks for microwave power amplifiers (MPAs).

MPAs are components in transmit/receive modules of both military and commercial radar and communications systems, including networks of basestations for wireless communications.

The development of large diameter III-nitride epiwafers at SET has been supported by the Defense Advanced Research Project Agency (DARPA).

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