II-VI and SET jointly develop AlInGaN/GaN HFETs
The novel epitaxial processing integrates conventional MOCVD with novel Migration Enhanced MOCVD (MEMOCVD), which allows for material deposition at reduced temperatures and rates comparable to those used in MBE technology.
The SET/II-VI team demonstrated and started sampling 2-inch diameter AlInGaN/GaN HFET wafers with average sheet resistance below 300 Ohm/sq., standard sheet resistance deviation less than 3% and Al-content variation less than 2%.
These epitaxial wafers are designed for fabrication of ultra-high power transistors, which are key building blocks for microwave power amplifiers (MPAs). MPAs amplify radio-frequency signals and are central pieces in transmit/receive modules of both military and commercial radars and communications systems, including networks of base stations for wireless communications.
"During the last 12 months, the SET/II-VI team has made impressive progress in developing this new epitaxial wafer technology", says Remis Gaska, president and CEO of SET. "Close collaboration with a well-established substrate vendor helped our startup company to accelerate technology development and scale-up, which is a big step toward commercial production".
"Both companies gained from this mutually beneficial collaboration", says Thomas Anderson, general manager of the Wide Band Gap Materials semiconductors group at II-VI. "Epitaxial material growth and device work at SET provided us with quick feedback on our material evaluation for device purposes, which is very important to us as a SiC substrate developer".
The development of this technology is strongly supported by the U.S. Government. Since October 2001, II-VI has received three major programs from AFRL, Title III and Navy EOC totaling more than $6 million and has focused on process improvement and process scale-up.
In 2003 alone, SET has received six small business innovation research (SBIR) awards from the Missile Defense Agency to develop and commercialize III-nitride materials and device technology. In three of these programs, SET will work closely with II-VI.
Sensor Electronic Technology
Sensor Electronic Technology, Inc. is a start-up business with the strategic goal to commercialize proprietary III-nitride semiconductor technology and become a major supplier of materials and devices for emerging high-power RF electronics, ultraviolet radiation technology and solid-state lighting markets. Founded in New York State by two Rensselaer Polytechnic Institute scientists, Remis Gaska and Michael Shur, SET received its first funding in 2000. In August 2002, the company moved all of its operations to its main facility in Columbia, SC.
II-VI Incorporated, Wide Bandgap Materials Group
The Wide Bandgap Materials Group of II-VI Incorporated has the strategic goal to become a leading volume supplier of affordable, high-performance wide bandgap semiconductor materials. This group currently manufactures and markets single crystal SiC substrates for use in the solid-state lighting, wireless infrastructure, RF electronics and power switching industries. The Wide Bandgap Materials Group has two facilities located in Pine Brook, NJ and Saxonburg, PA, respectively.
