II-VI Inc receives funding for SiC crystal growth
This contract builds upon successful development work in both a recently completed contract with the Office of Naval Research for APVT development, and a current contract funded by the DoD’s Title III Office.
The Title III contract was recently extended, with close to $2 million in additional funding focused on technology development and manufacturing of 3-inch-diameter, semi-insulating SiC substrates.
These and other government contracts funded over the past two years have assisted II-VI Inc in the development and commercial introduction of high quality, 2 inch 6H-SiC semi-insulating wafers with best-in-class CMP surface polish quality.
"This new funding demonstrates the government’s continued belief that the technology and manufacturing expertise that II-VI is developing are crucial in order to fully realize the potential of SiC substrates within the DoD and the commercial world,” commented Thomas Anderson, general manager of the Wide Band Gap Materials group.
“II-VI is committed to the wide bandgap market, and continues to commit significant R&D funding in addition to government support.”
