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Dow Corning forms wide bandgap business unit

Dow Corning has bought together its various wide bandgap semiconductor activities under a new business unit called Dow Corning Compound Semiconductor Solutions (DCCSS), located in Midland, MI.
The unit includes the in-house research and development into 3C-SiC deposition on silicon, which is being extended through university partnerships to include GaN epitaxy on the 3C-SiC.

Also included is the bulk SiC business acquired from Sterling Semiconductor in 2002 (see Dow Corning buys Sterling Semiconductor), and the GaN epitaxy activities of GaN Semiconductor, a start-up in Sunnyvale, CA, in which Dow Corning was an early stage investor before deciding to acquire the business.

"Our strategy in consolidating our wide bandgap semiconductor is to be a materials and service provider focused on meeting the needs of device manufacturers," said Robert Johns, Global Director of DCCSS. "We are moving people and assets to our Midland facility to bring the activities closer to our other semiconductor capabilities."

"Consolidating our operations will give us synergies to accelerate our implementation, and achieve world-class quality material specifications and economies of scale," added Johns.

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