Fairchild acquires Raytheon RF Components
Chip manufacturer Fairchild Semiconductor has bought the commercial unit of Raytheon’s RF components division. The purchase provides Fairchild with an immediate entry into applications that include wireless LANs and cellphone handset power amplifiers.
The agreement adds GaAs MMICs to Fairchild’s portfolio of compound semiconductor devices, which also includes LEDs and optocouplers.
Products and devices covered by the deal include transmit and receive modules, HBT and PHEMT power amplifiers, low noise amplifiers for handsets and wireless LANs, as well as components for wireless base stations, data communications systems, millimeter-wave systems and space-based communication systems. Financial details of the agreement were not disclosed.
Fairchild’s new RF business will report to its Power Discrete Group, led by executive vice president and general manager Izak Bencuya.
“The addition of RF power amplifiers to our current power product offering strengthens Fairchild’s presence in the wireless communications market, while enabling expanded design opportunities in the areas of wireless LANs and handsets,” said Bencuya.
“The total market size for gallium arsenide power amplifiers is projected by Strategy Analytics to grow to between $770 million and $1.2 billion by 2006, with a compound annual growth rate of 16%. We expect [our new RF components] business should ramp to revenues of more than $5 million per quarter towards the latter half of 2004.”
Fairchild has also acquired Raytheon s foundry partnership agreement for the supply of GaAs wafers and an equity stake in WIN Semiconductor, as well as access to foundry and support services at Raytheon’s Andover, Massachusetts facility.
More than thirty Raytheon designers, test engineers and business development employees will join Fairchild. Russ Wagner, former Raytheon RF Components vice president of Business Development, will lead the group.